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Threshold voltage
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#	Item
111	Steep-Slope Tunnel Field-Effect Transistor (FET) using III-V Nanowire on Si Prof. Takashi FUKUI & Dr. Katsuhiro TOMIOKA (Hokkaido University) As the scaling of Si transistors is reaching its limit, they are expected to h Add to Reading List Source URL: www.jst.go.jp Language: English - Date: 2013-11-20 21:23:43 Nanoelectronics Nanowire Transistor Field-effect transistor Threshold voltage Epitaxy Gallium arsenide Chemistry Electrical engineering Electromagnetism
112	Microsoft Word - Coordination 1991 Title.doc Add to Reading List Source URL: pml.nist.gov Language: English - Date: 2006-05-25 13:17:00 Electrical components Surge protector Analog circuits Varistor Lightning arrester Current source Voltage drop Impulse generator Threshold voltage Electromagnetism Electrical engineering Electricity
113	4H-SiC Trench MOSFETs with High Channel Mobility by using Tilted Trench Sidewalls Assistant Prof. Hiroshi YANO (NAIST) 1. Trench MOSFET Add to Reading List Source URL: www.jst.go.jp Language: English - Date: 2012-11-19 02:09:50 MOSFET Field-effect transistor Transistor Threshold voltage JFET Power electronics Power MOSFET Channel length modulation Electrical engineering Technology Electromagnetism
114	Microsoft Word - Bernstein Handbook - Nicholls Mods.doc Add to Reading List Source URL: www.theriac.org Language: English - Date: 2013-06-24 10:52:29 Semiconductors Semiconductor device fabrication Semiconductor devices Failure Hot carrier injection Negative bias temperature instability Reliability MOSFET Threshold voltage Electronic engineering Electromagnetism Technology
115	1 Table PIDS1 Near-Term[removed] Add to Reading List Source URL: www.itrs.net Language: English - Date: 2014-03-30 20:29:47 Computer hardware MOSFET Flash memory High-k dielectric Dynamic random-access memory CMOS Soft error Reliability engineering Threshold voltage Computer memory Electronics Electronic engineering
116	A Simplified Current-Voltage (I-V) Characteristics Model with Quantum Mechanical Effects for n-channel MOSFET Henok Abebe and Vance Tyree MOSIS service, USC Information Sciences Institute 4676 Admiralty Way, Marina del R Add to Reading List Source URL: www.cgu.edu Language: English - Date: 2006-06-15 18:37:14 Semiconductor devices Threshold voltage Transistors Electronic design MOSFET Polysilicon depletion effect Field-effect transistor Capacitance CMOS Electromagnetism Electrical engineering Electronic engineering
117	MOSFET Analytical Inversion Charge Model with Quantum Effects using a Triangular Potential Well Approximation H. Abebe, E. Cumberbatch, V. Tyree and H. Morris*** * University of Southern California, Information Scie Add to Reading List Source URL: www.cgu.edu Language: English - Date: 2006-06-15 18:36:51 Quantum mechanics Electricity Mathematical physics Depletion region Threshold voltage MOSFET Schrödinger equation Debye length Electronic band structure Physics Electromagnetism Algebra
118	Analytical Models for Quantized Sub-Band Energy Levels and Inversion Charge Centroid of MOS Structures Derived from Asymptotic and WKB Approximations H. Abebe, E. Cumberbatch, H. Morris** and V. Tyree* * USC Viterbi Add to Reading List Source URL: www.cgu.edu Language: English - Date: 2006-06-15 18:36:21 Schrödinger equation Depletion region Electronic band structure MOSFET Threshold voltage Quantum tunnelling Physics Quantum mechanics WKB approximation
119	Quantum Mechanical Effects Correction Models for Inversion Charge and Current-Voltage (I-V) Characteristics of the MOSFET Device H. Abebe* and E. Cumberbatch** Nanotech2003 1 * Add to Reading List Source URL: www.cgu.edu Language: English - Date: 2006-06-15 18:36:21 Threshold voltage Introduction to quantum mechanics Quantum Hall effect Schrödinger equation Gate oxide Quantum tunnelling Perturbation theory Field electron emission Physics Quantum mechanics MOSFET
120	High-voltage-compatible, fully depleted CCDs S.E. Holland, C.J. Bebek, K.S. Dawson, J.H. Emes, M.H. Fabricius, J.A. Fairfield, D.E. Groom, A. Karcher, W.F. Kolbe, N.P. Palaio, N.A. Roe, and G. Wang Lawrence Berkeley Nati Add to Reading List Source URL: snap.lbl.gov Language: English - Date: 2006-08-07 12:54:04 Integrated circuits Semiconductor devices Threshold voltage Charge-coupled device Depletion region Diode CMOS Transistor Self-aligned gate Electronic engineering Electrical engineering Electronics

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